Design of K-band CMOS Low-Noise, Power Amplifier and 60-GHz Millimeter-Wave Variable Gain Amplifier

碩士 === 國立成功大學 === 電腦與通信工程研究所 === 98 === This thesis presents the design of 24- and 60-GHz CMOS amplifier RFICs for millimeter-wave communication applications. The designed RFICs are fabricated with TSMC CMOS 0.18 μm and 90-nm standard processes, respectively. At first for the Ka-band amplifier d...

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Main Authors: Chu-YunYang, 楊楚昀
Other Authors: Huey-Ru Chuang
Format: Others
Language:zh-TW
Published: 2010
Online Access:http://ndltd.ncl.edu.tw/handle/11564077277691488506
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spelling ndltd-TW-098NCKU56520982016-04-22T04:22:58Z http://ndltd.ncl.edu.tw/handle/11564077277691488506 Design of K-band CMOS Low-Noise, Power Amplifier and 60-GHz Millimeter-Wave Variable Gain Amplifier K-bandCMOS低雜訊、功率放大器及60-GHz毫米波可調變增益放大器之研製 Chu-YunYang 楊楚昀 碩士 國立成功大學 電腦與通信工程研究所 98 This thesis presents the design of 24- and 60-GHz CMOS amplifier RFICs for millimeter-wave communication applications. The designed RFICs are fabricated with TSMC CMOS 0.18 μm and 90-nm standard processes, respectively. At first for the Ka-band amplifier design, a 15 - 22 GHz wideband CMOS low noise amplifier (LNA), 24-GHz high-efficiency power amplifier (PA), and 18-25 GHz wideband CMOS power amplifier are presented. The simulation and measurement results are compared and discussed. Secondly, a 60-GHz 90-nm CMOS variable gain amplifier (VGA) is presented. For the desired low phase-variation in the variable gain control range, the measured phase-variation of the VGA is less than about 10 degree. Huey-Ru Chuang 莊惠如 2010 學位論文 ; thesis 58 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 碩士 === 國立成功大學 === 電腦與通信工程研究所 === 98 === This thesis presents the design of 24- and 60-GHz CMOS amplifier RFICs for millimeter-wave communication applications. The designed RFICs are fabricated with TSMC CMOS 0.18 μm and 90-nm standard processes, respectively. At first for the Ka-band amplifier design, a 15 - 22 GHz wideband CMOS low noise amplifier (LNA), 24-GHz high-efficiency power amplifier (PA), and 18-25 GHz wideband CMOS power amplifier are presented. The simulation and measurement results are compared and discussed. Secondly, a 60-GHz 90-nm CMOS variable gain amplifier (VGA) is presented. For the desired low phase-variation in the variable gain control range, the measured phase-variation of the VGA is less than about 10 degree.
author2 Huey-Ru Chuang
author_facet Huey-Ru Chuang
Chu-YunYang
楊楚昀
author Chu-YunYang
楊楚昀
spellingShingle Chu-YunYang
楊楚昀
Design of K-band CMOS Low-Noise, Power Amplifier and 60-GHz Millimeter-Wave Variable Gain Amplifier
author_sort Chu-YunYang
title Design of K-band CMOS Low-Noise, Power Amplifier and 60-GHz Millimeter-Wave Variable Gain Amplifier
title_short Design of K-band CMOS Low-Noise, Power Amplifier and 60-GHz Millimeter-Wave Variable Gain Amplifier
title_full Design of K-band CMOS Low-Noise, Power Amplifier and 60-GHz Millimeter-Wave Variable Gain Amplifier
title_fullStr Design of K-band CMOS Low-Noise, Power Amplifier and 60-GHz Millimeter-Wave Variable Gain Amplifier
title_full_unstemmed Design of K-band CMOS Low-Noise, Power Amplifier and 60-GHz Millimeter-Wave Variable Gain Amplifier
title_sort design of k-band cmos low-noise, power amplifier and 60-ghz millimeter-wave variable gain amplifier
publishDate 2010
url http://ndltd.ncl.edu.tw/handle/11564077277691488506
work_keys_str_mv AT chuyunyang designofkbandcmoslownoisepoweramplifierand60ghzmillimeterwavevariablegainamplifier
AT yángchǔyún designofkbandcmoslownoisepoweramplifierand60ghzmillimeterwavevariablegainamplifier
AT chuyunyang kbandcmosdīzáxùngōnglǜfàngdàqìjí60ghzháomǐbōkědiàobiànzēngyìfàngdàqìzhīyánzhì
AT yángchǔyún kbandcmosdīzáxùngōnglǜfàngdàqìjí60ghzháomǐbōkědiàobiànzēngyìfàngdàqìzhīyánzhì
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