Studies of organic non-volatile memory device with polymeric charge trapping layer
碩士 === 國立成功大學 === 光電科學與工程研究所 === 98 === We investigated organic non-volatile memory devices that are operated at low-voltage and are based on organic thin-film transistors (OTFTs) with pentacene as an active layer. Hafnium dioxide (HfO2) was used as the main gate dielectric to reduce operation volta...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/05335209916994038869 |