Enhancement in Output Power of Blue GaN-based Light Emitting Diode Using Selective Area Regrowth and Sidewall Etching Technique

• Main Authors: Huan-ShaoKuo, 郭桓卲
• Other Authors: Jinn-Kong Sheu
• Format: Others
• Language: zh-TW
• Published: 2010
• Online Access: http://ndltd.ncl.edu.tw/handle/50346939501336632337

碩士 === 國立成功大學 === 光電科學與工程研究所 === 98 === Using the selective-area growth (SAG) method and sidewall-etching technique, we demonstrate GaN-based light-emitting diodes (LEDs) with enhanced light extraction efficiency. The SAG GaN-based LEDs with obliquely self-assembled facets improve light extraction efficiency. With an injection current of 20 mA, the light output power of the SAG GaN-based LEDs (310 × 310 μm) can be markedly improved by 20.6% magnitude compared with conventional GaN-based LEDs. Furthermore, the SAG technique eliminates the need for the dry etching procedure. 　　The LEDs with oblique undercut sidewalls formed by chemical crystallographic wet etching technique could improve the escape probability of photons from semiconductors to air. With an injection current of 20 mA, the light output power of the undercut sidewall LEDs (250 × 575 μm) can be markedly improved by a magnitude of 21.4% compared with conventional GaN-based LEDs. 　　Finally, the SAG growth method and sidewall-etching technique are combined to further increase light extraction efficiency.