Enhancement in Output Power of Blue GaN-based Light Emitting Diode Using Selective Area Regrowth and Sidewall Etching Technique
碩士 === 國立成功大學 === 光電科學與工程研究所 === 98 === Using the selective-area growth (SAG) method and sidewall-etching technique, we demonstrate GaN-based light-emitting diodes (LEDs) with enhanced light extraction efficiency. The SAG GaN-based LEDs with obliquely self-assembled facets improve light extraction e...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/50346939501336632337 |