Light output power enhancement of GaN-based Light Emitting Diodes with sidewall undercut and different depth of pattern sapphire substrates
碩士 === 國立成功大學 === 光電科學與工程研究所 === 98 === In the study, we first studied the electrical and optical characteristics of light emitting diode(LED) with different heights of cone shaped patterned sapphire substrate(PSS), which is cone-like shape. The heights of the cone-like shape are 1.2μm, 1.4μm an...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/01698773217342690804 |