A Novel Metal Induced Crystallization of Amorphous Silicon on Glass Substrate Technology for Low Temperature Poly-Silicon Solar Cell Applications

• Main Authors: Yong-JieZhong, 鐘永傑
• Other Authors: Yean-Kuen Fang
• Format: Others
• Language: zh-TW
• Published: 2010
• Online Access: http://ndltd.ncl.edu.tw/handle/15987422593618874381

碩士 === 國立成功大學 === 電機工程學系碩博士班 === 98 === The thermal budget and process time of the traditional metal induced crystallization (MIC) technology using Ni metal and a few hours 500-600 oC annealing are still higher and longer, respectively for preparing a low cost solar cell on glass substrate. In this thesis, we develop a new MIC technology with temperature can be lowered to 200 oC and without the long time and high temperature annealing. The new MIC technology includes sputtering an AZO thin film on an ITO glass substrate firstly. Then the AZO film is etched with 0.5% (volume ratio) HCL solution to form a textural surface. Finally, deposit a-Si film on the AZO at 200 oC by a PECVD system. During the deposition, the thin film is also transformed from an amorphous structure to a poly one through Si-In eutectic transformation, In ion precipitation, and re-crystallization. Besides, if a textural AZO is used; we find grain size of the poly film is also enhanced significantly. We use SEM, XRD, FTIR, and RAMAN to characterize physical and photoelectric properties of films. Compared to the conventional MIC method, the developed new method has the advantage of lower temperature(less 200 oC), less thermal budget, low metal contamination, higher Xc (crystalline volume fraction), and without an extra annealing process. Furthermore, we successfully fabricate the low temperature poly thin film solar cells prepared by the developed method to show its applicability. The initial performances of solar cell is Voc=0.66V, Jsc=2.96mA, FF=44% and conversion efficiency=1.56% under AM1.5G simulated spectrum of sunlight.