| Summary: | 碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 98 === In this thesis, doped 5、10、15 at.% Al into the Mo back contact to provide Al source to form CuInAlSe2 (CIAS) absorber with self-formed double graded band gap are studied. The double Al grading are self-forming and require no process tweaking or modification. The Al/(In+Al) ratio of the surface of the CIAS films are 0.208、0.212、0.222, respectively. The surface band gap of the CIAS films are 1.25 eV、1.26 eV、1.273 eV, respectively. The benefits of doping Al into Mo film are: reduced back contact resistance, improved Mo to glass adhesion, increased surface electric field (improved minority carrier collection) from graded Al content (graded band gap), and supply Al to form CIAS absorber layer.
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