Improvement of High-k/Metal Gate CMOSFET Performances and Reliability with Gadolinium Cap Incorporated Nitrogen，SiGe Channel and Oxygen Post Deposition Annealing
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 98 === Gadolinium (Gd) cap layer on the Hf-based high-k dielectric is proposed to reduce effective work function (EWF) and threshold voltage (VTH) of TaC metal gate. However, Gd could diffuse through Hf-based layer into substrate to cause unwanted damages, thus...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/73216310223634488875 |