ZnO EGFET pH sensor grown by vapor coolingcondensation technique

• Main Authors: Ying-ShouChiou, 邱英碩
• Other Authors: Ching-Ting Lee
• Format: Others
• Language: zh-TW
• Published: 2010
• Online Access: http://ndltd.ncl.edu.tw/handle/91438721115149238985

碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 98 === In this study, the vapor cooling condensation techique combining with AAM template was utilized to deposit zinc oxide thin film/nanostructure-layer complex structures, which was used as the sensing membrane of extended-gate field-effect-transistor (EGFET) pH sensor. In addition, the PEC method was applied to passivate the surface of the nanostructure of the sensor to reduce the influence of the Femi level pinning effect. Thus fabricated the ZnO-based EGFET pH sensor exhibited outstanding sensing performances owing to the larger sensing surface-to-volume ratio and lower surface state density. The obtained sensitivity of the ZnO nanostructure EGFET pH sensor was 44 mV/pH and 50 ?A/pH when pH values varied from 4 to 12. Moreover, the sensitivity of the pH sensor with PEC passivation treatment further achieved 49.34 mV/pH and 52 ?A/pH. At the same time, we applied this sensor to detect the glucose concentration. And the result showed sensing characteristics with sensitivity of 13.4 ?A/mM. In addition, the sensitivity of the ZnO glucose sensor with PEC passivation treatment further achieved 20.3 ?A/mM.