| Summary: | 博士 === 國立成功大學 === 建築學系碩博士班 === 98 === Electromagnetic interference (EMI) is a new form of pollution discovered in recent years. The elements Sn, Al and Cu not only possess EMI shield efficiency, but also have acceptable costs. Sn-xAl powder complex materials are used as coating in building materials. This study coats complex colloid mixed with Sn-xAl powders and polyethylene on glass to examine the shield effect on electromagnetic interference (EMI). The results show that adding Al to the Sn-xAl powders can increase the electromagnetic interference (EMI) shield at lower frequencies. Notably, the number of cavities in the coating layer increased with the coating thickness, with the result that the EMI shield could not improve with an increase in the coating thickness at higher frequencies.
In this study, sputtered Sn-Al thin films and Sn-Cu thin film were used to investigate the effect of the crystallization mechanism and film thickness on the electromagnetic interference (EMI) characteristics. In addition, the annealed microstructure, electrical conductivity and EMI of the Sn-xAl films and the Sn-xCu films were compared. The results show that Sn-Al film increased the electromagnetic interference (EMI) shielding after annealed. For the Sn-Cu films with higher Cu atomic concentration, the low frequency EMI shielding could not be improved. After annealing, the Sn-Cu thin film with lower Cu content possessed excellent EMI shielding at lower frequencies, but had an inverse tendency at higher frequencies. For both the Sn-Al and Sn-Cu thin films, after crystallized treatment, some sputtering films had higher electric conductivity, however the EMI shielding was not enhanced completely.
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