| Summary: | 碩士 === 國立成功大學 === 物理學系碩博士班 === 98 === In this paper,we investigate the low energy landau levels (LLs) in few layer graphene.The LL distribution strongly depends on the magnetic field strength, the layer number,and the stacking structure. The interlayer atomic interations lead to more low LLs and the asymmetry LLs about the zero Fermi energy. For AA-stacked bilayer graphene, the low lying LLspectrum cannot be accounted by a simple relation as that was made in AB-stacked bilayer graphene.However, it can be categorized into two groups of LLs according to the two sets of effective quantum numbers and . The two groups of LLs show the similar dependence on the quantum number and field strength. For AA-stacked trilayer graphene, there are three groups of LLs. By examining the carrier density distribution, we know that they are attributed to the outmost layers and the middle layer respectively.
These results are helpful to understand how the interlayer couplings affect the low-energy magnetoelectronic properties and could be used to analyze the optical experiments.
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