Investigation on the structural characteristics of In2O3 films

• Main Authors: Hsin-Lun Su, 蘇信綸
• Other Authors: Jyh-Rong Gong
• Format: Others
• Language: zh-TW
• Published: 2010
• Online Access: http://ndltd.ncl.edu.tw/handle/94413931364762981425

碩士 === 國立中興大學 === 物理學系所 === 98 === In this study, the structural characteristics of In2O3 films deposited on (0001) sapphire substrates were analysed by transmission electron microscopy (TEM), x-ray diffraction (XRD), and scanning electron microscope (SEM). In2O3 films were grown by atomic layer deposition (ALD) using TMIn (Trimethylindium) and nitrous oxide (N2O). Some of them were deposited with buffer-layers which were thermally treated at elevated temperature. Based on the results of TEM observations, twin crystals having {11-2} twin planes with atomic displacement along <111> directions. By applying g‧b= 0 invisibility criterion analyses, it was found that screw dislocations were generated primarily from the (222)In2O3/(0001)Al2O3. Buffer-layer annealing treatment was found to enable reduction of dislocation density in the In2O3 film.