| Summary: | 碩士 === 明新科技大學 === 電子工程研究所 === 99 === The device structure of Cu(In,Ga)Se2 thin-film solar cells includes substrate, back contact, absorber layer, buffer layer, transparent conductive oxide (TCO) film, antireflection coating and front contact. The content of this research focuses on the preparation of absorber and TCO films and the investigation physical properties of the resultant films.
The content of this research has two part, the first part studies the preparation of Cu(In,Ga)Se2 thin films, which was carried out by the pulsed laser deposition techniques. CuInGaSe2 films were deposited on various substrates of glass, soda lime glass(SLG), Mo-coated glass and Mo-coated soda lime glass. The physical properties of the prepared films, which were treated at different substrate temperatures of 450°C, 500°C, 550°C and 600°C, have been measured and demonstrated. Cu(In,Ga)Se2 compound films deposited on Mo-coated soda lime glass at substrate temperature of 550°C exhibit the single-phase chalcopyrite structure and better crystallinity. The resultant film reveals the resistivity of 1.93x10-3 Ohm-cm and the optical energy bandgap of 1.2-1.34eV.
The second part investigated the preparation and properties of boron-doped zinc oxide (B-doped ZnO) targets with various weight ratio of 0.25%, 0.5%, 0.75% and 1.5%, the results show the optimal doing amount of boron to be 0.75wt%. The resultant films have been deposited on glass substrate by using a B-doped target (with 0.75wt%) and the pulsed laser deposition technique. The boron-doped ZnO films were deposited at substrate temperatures of 150 ℃, 200 ℃, 250 ℃ and 300 ℃, respectively. The resistivity, transmittance and optical bandgap of the best boron-doped ZnO films deposited at substrate temperature of 250℃ show 1.5x10-3 Ohm-cm, > 80% and 3.55eV, respectively.
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