Preparation and Characterization of Ternary Copper-Indium-Disulfide Thin Film

• Main Author: 吳育叡
• Other Authors: Fu-Kuo Hsu
• Format: Others
• Language: zh-TW
• Published: 2011
• Online Access: http://ndltd.ncl.edu.tw/handle/33667183295520346753

碩士 === 明新科技大學 === 電子工程研究所 === 99 === In this study, the ternary compound targets of copper, indium, sulfur were prepared by the solid-state sintering technique, and the chalcopyrite-based CuInS2 thin films were deposited on different substrates and various substrate temperature by the KrF-based pulsed laser deposition process. Soda lime glass and normal glass with and without Mo-coated film were used the substrates for the preparation of CuInS2 films. Comparing to the conventional co-evaporation method, pulsed laser deposition used to prepare single-phase CuInS2 films by one-step processing is simplified process, control of stoichiometric ratio and economic cost in production. The physical characteristics of the prepared CuInS2 films, on different substrates and various substrate temperatures, were analyzed by X-ray diffraction (XRD), Scanning electron microscope (SEM), Atomic force microscope (AFM), UV-Vis spectrometry and Hall effect measurement system (HEMS), respectively. The identification of phase and compositional ratio of the copper-indium-disulfide films were measured by XRD and XRF. The film thickness, microstructure and surface roughness of CuInS2 compound films were measured and observed by α-step profilometer, SEM and AFM. UV-visible spectrometer (UV-Vis) was used to measure transmission, absorption coefficient and reflectivity of the resultant films in the visible region. Hall effect measurement system (HEMS) was used to determine the conductivity type and carrier concentration of copper-indium-disulfide thin films. From the measured results of the formation of crystalline phase, surface morphology and optical characteristics, the optimization of process parameters for the preparation of copper-indium-diselenide compound thin film could be investigated and demonstrated. The results show that the formation of single-phase CuInS2 films on soda lime glass substrate and the growth of larger grain were observed under the optimized process. The copper-indium-disulfide thin films with better characteristics were formed at the substrate temperature of 500 ℃ ~ 530 ℃. The higher substrate temperature for the preparation of compound films, the higher the absorption coefficient and the lower transmission of the resultant films were measured. From the formula, the optical energy gap of the prepared CuInS2 films is 1.3-1.4eV in the range of 800 ~ 900nm wavelength.