Analysis on Characteristics of Nanometer – Scale CMOSFETs with Different High-K / Dielectric Multilayer by Using Charge Pumping Technology
碩士 === 明新科技大學 === 電子工程研究所 === 98 === A high-k material was used to replace silicon dioxide for suppressing direct-tunneling effect. In this report, we investigated electrical characteristics and leakage current for nMOSFET devices using HfSiON as a high k dielectric material with different stack-gat...
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| Format: | Others |
| Language: | zh-TW |
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2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/00313719548410055911 |