Simulation and optimization of Heterojuction silicon solar cell

• Main Authors: Chih-chung Sun, 孫志中
• Other Authors: Ming-tung Tseng
• Format: Others
• Language: zh-TW
• Published: 2010
• Online Access: http://ndltd.ncl.edu.tw/handle/6pw6zq

碩士 === 明道大學 === 材料科學與工程學系碩士班 === 98 === Technology CAD (Technology Computer Aided Design, or TCAD) is a branch of electronic design automation that model semiconductor fabrication and semiconductor device operation. A computer model for a simulation of heterojunction (HJ) solar cells based on a variety of physical model is discussed. In this article, by means of modeling and numerical computer simulation, the influence of n+-layer concentration, n+-layer thickness, c-Si concentration, c-Si thickness, p+-layer concentration, p+-layer thickness, front contact width, Shockley–Read–Hall (SRH) lifetime on the solar cell performance is investigated. The simulation performance of silicon-based solar cell including open circuit voltaic (Voc), short circuit current density (Jsc), fill factor (FF), efficiency (?? is observed. This study improves the understanding of this device and to derive arguments for design optimization. After optimizing the simulation parameters, the silicon-base solar cell with efficiency over 21% was obtained by TCAD simulation technology.