Effects of interfacial fluorine passivation on the electric properties of the Al2O3 inter-poly Dielectric
碩士 === 龍華科技大學 === 電子工程研究所 === 98 === Interface fluorine passivation technique has been applied to the aluminum oxide (Al2O3) inter-poly capacitor to evaluate the electrical properties and dielectric reliabilities. Compared with current oxide/nitride/oxide (ONO) IPD, the fluorinated Al2O3 IPD can res...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/69265818749856802594 |
| Summary: | 碩士 === 龍華科技大學 === 電子工程研究所 === 98 === Interface fluorine passivation technique has been applied to the aluminum oxide (Al2O3) inter-poly capacitor to evaluate the electrical properties and dielectric reliabilities. Compared with current oxide/nitride/oxide (ONO) IPD, the fluorinated Al2O3 IPD can result in not only leakage current reduction, but also in breakdown voltage and charge-to-breakdown improvement, mainly ascribed to the trap density reduction and smooth interface. The results clearly demonstrate interface fluorine passivation becomes susceptible for Al2O3 inter-poly dielectric integration into current floating-gate flash memory technology.
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