| Summary: | 碩士 === 國立高雄應用科技大學 === 電子工程系 === 98 === A white top emitting organic light-emitting diode (TEOLED) with a structure of Al (120 nm)/MoO3 (4 nm)/NPB (45 nm)/MADN:BCzVB (30 nm, 4 %)/BCP (2 nm)/Alq3:DCJTB (25 nm, 1 %)/Bphen (30 nm)/Al (20 nm) was successfully fabricated by vapor deposition. As introducing higher electron mobility material Bphen as electron transporting layer, electron injection from cathode to emission layer (EML) would be increased, resulting in enhancement of recombination ratio in the EML. Furthermore, Bphen also has an excellent hole blocking ability, hence, more holes would be obstructed in the EML at the Alq3:DCJTB interface. By changing the thickness of Alq3:DCJTB layer to adjust the color coordinates to white emission. In addition, MADN blue host, BCzVB blue guest, and DCJTB red guest were used to prepare the blue and orange EMLs, and the white light was obtained by complementary color mixing.
Using the Al-Al electrode structure, the production time is saved; meanwhile, the TEOLED can be fabricated completely in a thermal evaporation system.
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