Applications of Nanomaterials to Die Bonding and Thermal Dissipation of High Power Light Emitting Diodes

• Main Authors: Jia-Wei Hong, 洪家偉
• Other Authors: Kwang-Jow Gan
• Format: Others
• Language: zh-TW
• Published: 2010
• Online Access: http://ndltd.ncl.edu.tw/handle/04543330392086823713

碩士 === 崑山科技大學 === 電子工程研究所 === 98 === Light-emitting diode (LED) is a function of energy-saving green energy and carbon reduction products, which can save more power and have longer life than the traditional light source. However, the high power LED is a lighting component of high heat generation, producing much larger heat than the traditional LED under high illumination. On the other hand, the LED by the small size of grains, thus making high-power LED heat density is very high, because of high power LED hot most of the surface are concentrated in the P-N junction, resulting in LED components overheating, overheating will affect the high-power wavelength shift with the optical characteristics of LED degradation, and the LED components overheating, will result in coefficient of thermal expansion of components is not stability, high mechanical loads between components will stress the damage. Therefore, this thesis is to improve the junction temperature of LED die attaching by using carbon nanotubes and Silicon Carbide. As both carbon nanotubes and silicon carbide thermal conductivity is about 3000 ~ 6000 (W /m‧K) and 300 ~ 380 (W /m‧K), so this study used carbon nanotubes and silicon carbide doped within the epoxy resin to resolve the thermal conductivity problem of LED for junction temperatures. In this experiment, measuring the junction temperature using forward bias voltage can see that the Epoxy is about 123℃, epoxy doped silicon carbide is about 99℃ and Epoxy doped COOH-CNT/SiC is about 93oC.From above the data that carbon nanotubes doped in epoxy device that significantly reduces the junction temperature of high power LED is 30℃. Such device improved the thermal dissipation of high power LED by up to 24%.