Efficiency Improvement of Iridium Complex Red Phosphorescent Organic Light-Emitting Diodes by Doping Technique

碩士 === 義守大學 === 電子工程學系碩士班 === 98 === In this Study, the red phosphorescent organic light-emitting diodes (RPHOLED) has been fabricated containing a host of 4,4’-bis(9-carbazolyl)-biphenyl[CBP] and a dopant of Iridium complex bis(1-(phenyl)isoquinoline) iridium (III) acetylanetonate [Ir(piq)2(acac)]...

Full description

Bibliographic Details
Main Authors: Lien-Cheng Kao, 高連成
Other Authors: Meiso Yokoyama
Format: Others
Language:zh-TW
Published: 2010
Online Access:http://ndltd.ncl.edu.tw/handle/36822792924985373938
id ndltd-TW-098ISU05428028
record_format oai_dc
spelling ndltd-TW-098ISU054280282015-10-13T18:25:52Z http://ndltd.ncl.edu.tw/handle/36822792924985373938 Efficiency Improvement of Iridium Complex Red Phosphorescent Organic Light-Emitting Diodes by Doping Technique 以摻雜技術提升銥錯化物紅光磷光有機發光二極體之效率 Lien-Cheng Kao 高連成 碩士 義守大學 電子工程學系碩士班 98 In this Study, the red phosphorescent organic light-emitting diodes (RPHOLED) has been fabricated containing a host of 4,4’-bis(9-carbazolyl)-biphenyl[CBP] and a dopant of Iridium complex bis(1-(phenyl)isoquinoline) iridium (III) acetylanetonate [Ir(piq)2(acac)]. Various doping technique is discussed for optimizing the device’s characteristics. RPHOLEDs with an uniformly doped emission layer are fabricated. When the doping concentration of Ir(piq)2(acac) in CBP reaches 15 wt%, the device exhibits the maximum luminance of 16700 cd/m2 at 16.1V, and the maximum luminous efficiency of 6.3 cd/A at 10 mA/cm2. The CIE coordinates (x,y) of the device is (0.67, 0.32). Unlike commonly uniformly doped emission layer, experimental results demonstrate that electroluminescent efficiency can be improved by changing doping profile of Ir(piq)2(acac) in CBP of the RPHOLED device. By examining the changes of recombination zone and current density in a partially doped emission layer, we find that most of the hole/electron recombination occurs at the emission layer close to the hole blocking layer. Hole injection and transporting ability and path can be improved if an appropriate doping concentration exists at the emission layer close to the hole transporting layer. RPHOLEDs with a stepwise doped emission layer are successfully fabricated. The structure of the device is ITO/m-MTDATA(30nm)/NPB(10nm)/CBP:Ir(piq)2(acac)(7 wt%)(20nm)/CBP:Ir(piq)2(acac)(15wt%)(10nm)/Bphen(10nm)/Alq3(30nm)/LiF(1nm)/Al. It shows the maximum luminance of 38700cd/m2 at 14V, and the maximum luminous efficiency of 10.33cd/A at 9mA/cm2. The CIE coordinates (x,y) of the device is (0.67, 0.32) and the color purity is 99.74%, which meets the need of red light-emitting requirements in the full color flat-panel display Meiso Yokoyama Shui-Hsiang Su 橫山明聰 蘇水祥 2010 學位論文 ; thesis 65 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 碩士 === 義守大學 === 電子工程學系碩士班 === 98 === In this Study, the red phosphorescent organic light-emitting diodes (RPHOLED) has been fabricated containing a host of 4,4’-bis(9-carbazolyl)-biphenyl[CBP] and a dopant of Iridium complex bis(1-(phenyl)isoquinoline) iridium (III) acetylanetonate [Ir(piq)2(acac)]. Various doping technique is discussed for optimizing the device’s characteristics. RPHOLEDs with an uniformly doped emission layer are fabricated. When the doping concentration of Ir(piq)2(acac) in CBP reaches 15 wt%, the device exhibits the maximum luminance of 16700 cd/m2 at 16.1V, and the maximum luminous efficiency of 6.3 cd/A at 10 mA/cm2. The CIE coordinates (x,y) of the device is (0.67, 0.32). Unlike commonly uniformly doped emission layer, experimental results demonstrate that electroluminescent efficiency can be improved by changing doping profile of Ir(piq)2(acac) in CBP of the RPHOLED device. By examining the changes of recombination zone and current density in a partially doped emission layer, we find that most of the hole/electron recombination occurs at the emission layer close to the hole blocking layer. Hole injection and transporting ability and path can be improved if an appropriate doping concentration exists at the emission layer close to the hole transporting layer. RPHOLEDs with a stepwise doped emission layer are successfully fabricated. The structure of the device is ITO/m-MTDATA(30nm)/NPB(10nm)/CBP:Ir(piq)2(acac)(7 wt%)(20nm)/CBP:Ir(piq)2(acac)(15wt%)(10nm)/Bphen(10nm)/Alq3(30nm)/LiF(1nm)/Al. It shows the maximum luminance of 38700cd/m2 at 14V, and the maximum luminous efficiency of 10.33cd/A at 9mA/cm2. The CIE coordinates (x,y) of the device is (0.67, 0.32) and the color purity is 99.74%, which meets the need of red light-emitting requirements in the full color flat-panel display
author2 Meiso Yokoyama
author_facet Meiso Yokoyama
Lien-Cheng Kao
高連成
author Lien-Cheng Kao
高連成
spellingShingle Lien-Cheng Kao
高連成
Efficiency Improvement of Iridium Complex Red Phosphorescent Organic Light-Emitting Diodes by Doping Technique
author_sort Lien-Cheng Kao
title Efficiency Improvement of Iridium Complex Red Phosphorescent Organic Light-Emitting Diodes by Doping Technique
title_short Efficiency Improvement of Iridium Complex Red Phosphorescent Organic Light-Emitting Diodes by Doping Technique
title_full Efficiency Improvement of Iridium Complex Red Phosphorescent Organic Light-Emitting Diodes by Doping Technique
title_fullStr Efficiency Improvement of Iridium Complex Red Phosphorescent Organic Light-Emitting Diodes by Doping Technique
title_full_unstemmed Efficiency Improvement of Iridium Complex Red Phosphorescent Organic Light-Emitting Diodes by Doping Technique
title_sort efficiency improvement of iridium complex red phosphorescent organic light-emitting diodes by doping technique
publishDate 2010
url http://ndltd.ncl.edu.tw/handle/36822792924985373938
work_keys_str_mv AT lienchengkao efficiencyimprovementofiridiumcomplexredphosphorescentorganiclightemittingdiodesbydopingtechnique
AT gāoliánchéng efficiencyimprovementofiridiumcomplexredphosphorescentorganiclightemittingdiodesbydopingtechnique
AT lienchengkao yǐcànzájìshùtíshēngyīcuòhuàwùhóngguānglínguāngyǒujīfāguāngèrjítǐzhīxiàolǜ
AT gāoliánchéng yǐcànzájìshùtíshēngyīcuòhuàwùhóngguānglínguāngyǒujīfāguāngèrjítǐzhīxiàolǜ
_version_ 1718033274202226688