Analysis of the DC and Internal Efficiency Characteristics of the β-FeSi2 DH-LED

• Main Authors: Hong-Yu Chen, 陳宏裕
• Other Authors: Jung-Sheng Huang
• Format: Others
• Language: zh-TW
• Published: 2010
• Online Access: http://ndltd.ncl.edu.tw/handle/95646691805661693502

碩士 === 義守大學 === 電子工程學系碩士班 === 98 === The light-emitting devices are all fabricated by using Ⅲ-Ⅴ compound materials at the present day. However, the lattice constants of Ⅲ-Ⅴcompound materials are different from Si material, therefore the light-emitting devices can not be integrated with Si chips. Recently, light emission from Si has been showed to be possible when the Si in the form of a low-dimensional system or when selected active impurities (such as erbium) and/or new phases (such as β-FeSi2). So far the studies of β-FeSi2 by many scholars have been focused on the investigation of its optical and electrical properties to find out the optimum thin film growth conditions. The theoretical investigation of β-FeSi2 light-emitting devices has not been reported. Hence, in this study will design and analysis the DC characteristics and ideal internal quantum efficience of a double-heterostructure junction light-emitting diode fabricated by β-FeSi2 as designed and analyzed. By using semiconductor theory, the electric field, potential, band structure and carrier concentration distribution are calculated. To analyze DC characristic, By using theory of thermionic emission, the injection electron current density and leakage electron current density are calculated, then the rate equation will help us to obtain ideal internal quantum efficient. Analytical solutions will help us to know the effect of β-FeSi2-based LED lighting efficiency to accomplish highly internal efficiency light-emitting diode.