Fabrication and Characterization of Electrodeposited Copper Oxide, Cuprous Oxide and Copper Sulfide Thin Films

• Main Authors: Chii-shyang Huang, 黃啟翔
• Other Authors: none
• Format: Others
• Language: zh-TW
• Published: 2010
• Online Access: http://ndltd.ncl.edu.tw/handle/37661478394213581161

碩士 === 逢甲大學 === 電子工程所 === 98 === In this thesis, the copper oxide (CuO) and copper sulfide (CuS) thin films were fabricated from Cu films deposited on ITO/Glass substrates by electrodeposition technique. The Cu thin film is electrodeposited by using an aqueous solution of 0.2 M CuSO4 with a pH value approximately 3.3. The CuO thin films were annealed in air for the temperatures from 200 to 500 ℃. The Cu thin films combined with sulfur sheet were annealed in the vacuum-sealed glass ampoules. The CuS thin films were annealed at the temperatures from 150 to 400 ℃ at different time. The effect of annealing on the structure and morphology of thin films are studied. X-ray diffraction patterns showed that the CuO thin films annealed at 200 and 300 ℃ are of cuprite structure with composition Cu2O. The annealing at 500 ℃ can convert these films to CuO. A single hexagonal CuS phase was obtained from the Cu films annealed between 200 and 400 ℃. Cuprous oxide (Cu2O) thin films were electrodeposited on ITO/Glass substrates in an electrochemical cell containing an aqueous solution. The deposition parameters such as deposition current density, deposition time and deposition temperature. X-ray diffraction studies showed the deposition of single-phase cubic Cu2O film with improved crystallinity at the optimum deposition parameter conditions. The crystal structures of the films were identified by X-ray diffraction utilizing Cu Kα radiation. The surface morphology and composition of films were studied by SEM micrographs and EDS analysis, respectively.