A Low Insertion Loss GaAs pHEMTSwitch Utilizing Dual n+-Doping AlAsEtching Stop Layers Design

A Low Insertion Loss GaAs pHEMTSwitch Utilizing Dual n+-Doping AlAsEtching Stop Layers Design

碩士 === 逢甲大學 === 電子工程所 === 98 === none

Bibliographic Details
Main Authors:	Da-Wei Lin, 林大為
Other Authors:	Feng-Tso Chien
Format:	Others
Language:	zh-TW
Published:	2010
Online Access:	http://ndltd.ncl.edu.tw/handle/40816483711387361149

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