A Low Insertion Loss GaAs pHEMTSwitch Utilizing Dual n+-Doping AlAsEtching Stop Layers Design

A Low Insertion Loss GaAs pHEMTSwitch Utilizing Dual n+-Doping AlAsEtching Stop Layers Design

碩士 === 逢甲大學 === 電子工程所 === 98 === none

Bibliographic Details
Main Authors: Da-Wei Lin, 林大為
Other Authors: Feng-Tso Chien
Format: Others
Language:zh-TW
Published: 2010
Online Access:http://ndltd.ncl.edu.tw/handle/40816483711387361149
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spelling ndltd-TW-098FCU054280012016-04-25T04:27:01Z http://ndltd.ncl.edu.tw/handle/40816483711387361149 A Low Insertion Loss GaAs pHEMTSwitch Utilizing Dual n+-Doping AlAsEtching Stop Layers Design 高摻雜n型砷化鋁技術之低插入損耗砷化鎵高電子遷移率電晶體 Da-Wei Lin 林大為 碩士 逢甲大學 電子工程所 98 none Feng-Tso Chien 簡鳳佐 2010 學位論文 ; thesis 63 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 碩士 === 逢甲大學 === 電子工程所 === 98 === none
author2 Feng-Tso Chien
author_facet Feng-Tso Chien
Da-Wei Lin
林大為
author Da-Wei Lin
林大為
spellingShingle Da-Wei Lin
林大為
A Low Insertion Loss GaAs pHEMTSwitch Utilizing Dual n+-Doping AlAsEtching Stop Layers Design
author_sort Da-Wei Lin
title A Low Insertion Loss GaAs pHEMTSwitch Utilizing Dual n+-Doping AlAsEtching Stop Layers Design
title_short A Low Insertion Loss GaAs pHEMTSwitch Utilizing Dual n+-Doping AlAsEtching Stop Layers Design
title_full A Low Insertion Loss GaAs pHEMTSwitch Utilizing Dual n+-Doping AlAsEtching Stop Layers Design
title_fullStr A Low Insertion Loss GaAs pHEMTSwitch Utilizing Dual n+-Doping AlAsEtching Stop Layers Design
title_full_unstemmed A Low Insertion Loss GaAs pHEMTSwitch Utilizing Dual n+-Doping AlAsEtching Stop Layers Design
title_sort low insertion loss gaas phemtswitch utilizing dual n+-doping alasetching stop layers design
publishDate 2010
url http://ndltd.ncl.edu.tw/handle/40816483711387361149
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