Study on NOI Memory Device Retention under Hot Electron Injection
碩士 === 中原大學 === 電子工程研究所 === 98 === The non-volatile semiconductor memories have rapidly progressed as the semiconductor technologies advance. The memory devices having low power consumption, high density, high-speed operation, and full compatibility with the standard CMOS processing will be the fut...
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| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/54cqkx |
| Summary: | 碩士 === 中原大學 === 電子工程研究所 === 98 === The non-volatile semiconductor memories have rapidly progressed as the semiconductor technologies advance. The memory devices having low power consumption, high density, high-speed operation, and full compatibility with the standard CMOS processing will be the future development trend in non-volatile memories.
This work explores the data retention of trapped electrons in the Non-overlapped Implantation (NOI) MOSFETs. As potential non-volatile memories, the NOI devices can be programmed by channel hot electron injection. By Arrhenius equation, the charge loss with time has been modeled and predicted under elevated temperatures. The charge loss in the nitride was also measured using a modified charge pumping method. Data retention characteristics with different programming conditions were studied. Finally, the trend of charge loss in the NOI devices is affected by different program biases.
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