Study on the characteristics of ZnO films fabricated by AP-MOCVD
博士 === 中原大學 === 電子工程研究所 === 98 === This thesis, focuses on the characterizations of undoped, n- and p- type zinc oxide (ZnO) semiconductors fabricated by atmospheric pressure metal organic chemical vapor deposition (AP-MOCVD). During the AP-MOCVD process, diethylzinc (DEZn) and water were used as th...
Main Authors: | Yen-Chin Huang, 黃彥欽 |
---|---|
Other Authors: | Wu-Yih Uen |
Format: | Others |
Language: | en_US |
Published: |
2010
|
Online Access: | http://ndltd.ncl.edu.tw/handle/64203145048136347332 |
Similar Items
-
ZnO film growth with ZnO buffer layer by MOCVD
by: Chen-Wei Lu, et al.
Published: (2010) -
On the mocvd growth of ZnO
by: Pagni, Olivier Demeno
Published: (2004) -
Vertical MOCVD Deposition of ZnO Thin Film for LED
by: Yung-You Shentu, et al.
Published: (2006) -
Characteristic Analysis of ZnO Thin Films Grown by MOCVD on Si and Oxide Single-crystal Substrates and Manufacture of ZnO LED
by: C.W.Chang, et al.
Published: (2008) -
Study on the characteristics of ohmic contact to ZnO grown by atmospheric pressure MOCVD
by: Shu-Hui Hsiang, et al.
Published: (2009)