CdSe quantum dots green light emitting diodes grown by molecular beam epitaxy

• Main Authors: Lin-Chen Ko, 柯伶蓁
• Other Authors: J. S. Wang
• Format: Others
• Language: zh-TW
• Published: 2010
• Online Access: http://ndltd.ncl.edu.tw/handle/19354177053055743519

碩士 === 中原大學 === 物理研究所 === 98 === Abstract We investigate the characteristics of Cl-doped CdSe quantum dots grown by molecular beam epitaxy on GaAs substrates. The room temperature PL shows the Cl-doped CdSe quantum dots have better light emission efficiency. The temperature dependent PL shows the activation energy of Cl-doped CdSe quantum dots is more than undoped CdSe quantum dots, that was due to that the doped quantum dots have much more electrons, even though some captured by non-radiative center but there still have enough carriers to recombined with holes. We compare the room temperature PL spectra after annealing the Cl-doped CdSe quantum dots and undoped quantum dots by 150 ℃ 2 hours. We found the doped CdSe quantum dots have better thermal-stability. All the result indicated the Cl-doped CdSe quantum dots are suitable for the applications of light emitting diodes.