The Analysis of the Flow Field in a Vacuum Chamber for the Deposition of Thin-Film of Solar Cells

• Main Authors: Chen Pei Wu, 吳振培
• Other Authors: M.T. Sun
• Format: Others
• Published: 2010
• Online Access: http://ndltd.ncl.edu.tw/handle/03568534220414964520

碩士 === 長庚大學 === 機械工程學系 === 98 === The gradual depletion of fossil fuels and global environmental consciousness, to reduce carbon emissions and develop alternative energy sources become important issue in today's world. Among them, the development of green energy industry the most vigorous development, such as solar, hydro, wind and so on. Among these green energy industry, solar energy research directions for the main current of solar cells. This study was to study the vacuum tank through nozzle jet flow field, with the microwave electron cyclotron resonance chemical vapor deposition method to produce large-sized thin film (1.1 m × 1.4 m) thin film solar cell devices. In the analysis, this study used the commercial software COMSOL 3.4 build numerical models of equipment cabin, from the boundary conditions of incompressible flow started, then join the convection and diffusion boundary conditions, and the last to join the surface coating substrate boundary. Add boundary conditions one by one, to complete the internal SiH3 vacuum deposited on the substrate hull process. However, in a large area in order to obtain uniform surface coating substrate, this study will Taguchi's method plasma source design hull center height Z0, elliptic axis ratio of the length of the slope β and α level of these three factors to adjust the three simulation experiments, and find the best of these three factors . The results showed that (1) plasma source at a fixed height Z0 hull center, its substrate deposition surface heterogeneity SiH3 radical about 25% ; (2) using trial and error method to change the Z0, the substrate surface, deposition nonuniformity SiH3 radical about 21% ; (3) the use of Taguchi method in addition to adjusting Z0, the other with the long axis and short axis of the ellipse equation and the slope of the ratio β α these two factors. This also find Z0、 α、 β the best of the three factors, to the substrate surface, deposition nonuniformity SiH3 radical about 8%. (4), however, spread through the optimization of coating thickness with the average growth rate in the formula, you can calculate the coating deposition rate of about 1.28  109 ms1. Results of this study MWECR-CVD process used to simulate the success of microcrystalline silicon thin films on a large-size substrate.