| Summary: | 碩士 === 長庚大學 === 電子工程學系 === 98 === Recently, floating gate memory devices have be widely used in flash memory device. However, there are some major issues including devices scaling limitation, higher operation voltage and poor data retention time needed to overcome for conventional floating gate memory. In order to solve above issues, we use high k materials as charge storage layer which with discrete charge storage nodes have been proposed to be a possible candidate for the replacement of floating gate memory.
In this thesis, we use high-k dielectric material as charge trapping layer and blocking layer for flash memory. The physical and electrical characterization are compared of different MOHOS capacitors structures. The influence of Ti adding into Gd2O3 film as trapping layer are discussed with Gd2O3, and that in different RTA treatment. In addition, we investigate the high-k materials such as HfO2 and Al2O3 replace SiO2 as blocking layer for flash memory. In this research, the structure of Al/HfO2/GdTixOy/SiO2/Si has best electrical characteristic after annealing treatment at 900℃ in O2 ambient fo 60s. Besides, we use CeO2 as charge trapping layer for flash memory capacitor. We can find the optimize condition of CeO2 with RTA treatment at 950℃. We can use this condition for the multi charge storage layer memory application.
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