The investigation of Ti-doped high-k dielectrics deposited on polycrysalline silicon
碩士 === 長庚大學 === 電子工程學研究所 === 98 === In this thesis, we studied the Ti-doped high-k materials such as Er2TiO3, Gd2TiO5 to replace traditional SiO2 insulator in thin film transistors and DRAM technology applications. The RF sputtering was used to deposit these high-k materials combined with post-RTA t...
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| Format: | Others |
| Online Access: | http://ndltd.ncl.edu.tw/handle/91667581654783432951 |