Investigation of Chemical Bath Deposition of CdO,SnO2 and Cd2SnO4 Thin Films

• Main Authors: Chia Ta Chen, 陳家達
• Other Authors: L. B. Chang
• Format: Others
• Published: 2010
• Online Access: http://ndltd.ncl.edu.tw/handle/53210744986831139761

碩士 === 長庚大學 === 光電工程研究所 === 98 === In Chemical Bath Deposition (CBD), deposition of thin films takes place from aqueous solutions at low temperature, non-vacuum environment and inexpensive large-area deposition condition with the help of different complex agents. In this thesis, we try to use CBD to grow CdO and SnO2 thin films in the beginning with the final goal of obtaining Cd2SnO4 by annealing of those two composite layers. Such Cd2SnO4 film could be an alternative to indium tin oxide (ITO) layers that are commonly used as TCO layers or Window Layer for solar cells. We have succeeded in growing CBD-CdO thin films using three different complex agents. Undoped CBD-CdO films with a resistivity as low as 1.01 x 10-2 -cm and a carrier density as high as 2.59 x 1020 cm-3 have been obtained. SnO2 films also have been successfully grown using CBD. Finally, fabrication of Cd2SnO4 thin films using CBD is investigated too. According to RBS data, the Cd2SnO4 annealed film is highly stoichiometric with a Sn:O ratio of about (1.00: 2.00). On the other hand Cd2SnO4 layer with a wide bandgap of ~ 2.7 eV and a carrier density as high as 3.74 x 1019 cm-3 and a resistivity ~ 4.78 x 10-1 Ω-cm is achieved.