| Summary: | 碩士 === 長庚大學 === 化工與材料工程學系 === 98 === Due to the features of saving material, simple process, large-scale fabrication, etc., the thin film solar cell is a potential candidate of low cost solar energy product. Among the thin film solar cell products, amorphous silicon attracts more intention and has been developed. However, there is a barrier for the improvement of efficiency by using this material. In recent years, another thin film material, Copper Indium Gallium Selenide (CIGS), becomes the a interesting material due to its advantages, such as : (a) low fabrication cost, (b) low energy requirement for manufacture, (c) large area device with higher efficiency, (d) high production yield and (e) flexible usage of substrate (ex. glass, stainless, polymer, tin foil, etc.) It is believed that the CIGS will be the main stream of thin film solar cell.
In this study, we try to deposit various metal materials on Al-doped zinc oxide (AZO) conduction film. The metal materials include Ni/Ag and Ni/Au in this study. After deposition of metal alloy, the samples were annealed with different annealed temperature in the range of 200~400℃. We use the transmission line model (TLM) method to analyze the ohmic contact resistivity of samples.
In addition, this study also deposited the optimized metal materials/AZO on Copper Indium Selenide (CIS) thin film solar cell. Then the samples were processed with different annealing conditions. The efficiency stability of solar cell is also analyzed.
|
|---|
