Structural transformation of CoSi2 islands on a Si(111)-(5×2)/Au surface:step effect
碩士 === 國立中正大學 === 物理所 === 98 === We have studied the growth of cobalt silicide islands by heating Co-deposited Si(111)-(5×2)/Au surface by scanning tunneling microscopy. By using a silicon wafer with a 0.3° miscut angle as substrate, we are able to observe both steps and terraces on the surface at t...
Main Authors: | Shang-wei Kuo, 郭上瑋 |
---|---|
Other Authors: | Fu-Kwo Men |
Format: | Others |
Language: | zh-TW |
Published: |
2010
|
Online Access: | http://ndltd.ncl.edu.tw/handle/62127533244018338543 |
Similar Items
-
Height-dependent structural transformation of CoSi2 islands on a nominally flat Si(111)-(5×2)/Au surface
by: Cheng-Rui Huang, et al.
Published: (2010) -
Effect of coexisting (√7×√7) and (5×2) domains on the growth of CoSi2 islands on Si(111)
by: Liu, YinMing, et al.
Published: (2012) -
High-temperature endurability of CoSi2 and Co-W/CoSi2 diffusion-barrierformation technology
by: GONG,ZHENG-ZHI, et al.
Published: (1990) -
Electrical Property and Interface Characterization of CoSi2 and Si
by: Chiou, Chien-Jyun, et al.
Published: (2014) -
CoSi2 shallow junction fabrication
by: Chen, Chien-Hui, et al.
Published: (1997)