Investigation of Design and Fabrication of ZnO-based Field-Effect Transistors

• Main Authors: Tai-Kai Lin, 林道凱
• Other Authors: Chau-Kuang Liau
• Format: Others
• Language: zh-TW
• Published: 2009
• Online Access: http://ndltd.ncl.edu.tw/handle/25826784883308455934

碩士 === 元智大學 === 化學工程與材料科學學系 === 97 === ZnO-based metal-semicoductor field effect transistor (MESFET) and metal-oxide-semicoductor field effect transistor (MOSFET) were designed and fabricated by spin coating of commercial ZnO, metal ions-doped ZnO and sol-gel SiO2 thin films. The ZnO-FET devices were fabricated on the ITO glass as the bottom gate and on the ZnO thin film as the source and drain. The characteristic of the MESFETs with a semiconductor junction diode and MOSFETs were illustrated by I-V measurement. The performance of the FET devices can be controlled by the gate electrode to transform the trend of the current-voltage of the source and drain. The result shown Cr3+-ZnO MESFET with a better normally on/off currents and threshold voltage than Fe3+-ZnO MESFET. On the other hand, ZnO MOSFET had a better than normally on/off currents and threshold voltage than Fe3+-ZnO MOSFET. The performance of the elecrtric properties of the FET devices could be affected by the conditions of the materials and fabrications, such as metal ion-doped, heating temperature, and thickness of films.