Relation of the parasitic source/drain resistance for MOSFET’s to the effective electron mobility

• Main Authors: Kun-ying Yang, 楊坤穎
• Other Authors: Yang-hua Chang
• Format: Others
• Language: zh-TW
• Published: 2009
• Online Access: http://ndltd.ncl.edu.tw/handle/93273657145691581566

碩士 === 國立雲林科技大學 === 光學電子工程研究所 === 97 === Pocket implant structure of MOSFET’s improves some short-channel effects, but it also has some disadvantages such as Reverse Short Channel Effect (RSCE) and IDsat Degradation. For short channel devices, the drain current degradation is more associated to parasitic source/drain resistance (RSD). Therefore, the parameters of parasitic source/drain must be included in a drain current model for short channel MOSFET’s. We present a new method to extract gate-bias dependent source/drain resistance in MOSFET. With the thinner gate oxide layer in MOSFET, a simple mobility model becomes deficient. It will induce some inaccuracy on RSD extraction. The method provides more accurate parameter extraction than conventional ones without complicated derivation, and is especially useful for advanced submicron MOSFET’s. Therefore, our extraction algorithm applied both the new and old mobility model to extract RSD and make it more accurate.