Characteristic simulate and analyze of double heterojunction bipolar transistor with InGaAsSb Base
碩士 === 國立雲林科技大學 === 光學電子工程研究所 === 97 === The double heterojunction bipolar transistor is composed with high mobility InGaAsSb Base. It has a lower base/emitter (B/E) junction turn-on voltage and a lower VCE offset voltage. The excellent DC performance is due to lower conduction band offset and highe...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/42941285319473326317 |