| Summary: | 碩士 === 國立雲林科技大學 === 光學電子工程研究所 === 97 === The double heterojunction bipolar transistor is composed with high mobility InGaAsSb Base. It has a lower base/emitter (B/E) junction turn-on voltage and a lower VCE offset voltage. The excellent DC performance is due to lower conduction band offset and higher valence band offset at InAlAs/InGaAsSb E/B junction. It also leads to a higher electron injection efficiency. In our measurement, the junction ideality factor is close to the ideal value of unity. We analyze the physics phenomenon in InAlAs/InGaAsSb DHBT by simulation.
In this thesis, the DC performance in InAlAs/InGaAsSb DHBT is investigated with MEDICI simulation through energy band diagram. The space charge region obviously affects the junction ideality factor. This study propose a procedure in MEDICI to discuss and modify the current transport differences between measurement and simulation. This study also report the effects of Sb content in InxGa1-xAsySb1-y as well as the effect of In0.52Al0.48As or InP in the emitter. The Sb composition of 0, 27%, and 49% were used, and material properties such as conduction band discontinuity (�媧C), effective density of states in conduction band and valence band (NC, NV), bandgap energy (EG), and intrinsic carrier concentration (ni) are changed accordingly.
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