The study on fabrication and application of different annealing mechanism to aluminum doped zinc-oxide

• Main Authors: Quan-ting Lai, 賴冠廷
• Other Authors: Fu-hsiang Chuang
• Format: Others
• Language: zh-TW
• Published: 2009
• Online Access: http://ndltd.ncl.edu.tw/handle/31175401876742401816

碩士 === 國立雲林科技大學 === 光學電子工程研究所 === 97 === In this study, we try to fabricate a novel transparent conducting thin film, AZO by RF sputter, and apply it into organic light emiting diode. We want it to replace ITO because the shortage will happen soon. At first, we led argon 10 sccm into the chamber, then control the pressure of chamber at 3m torr and the sputtering power is 140W, changing the sputtering time and the rotatial rate of holder to find the best sputtering condition out. In the second section, we try the different annealing condition which is RTA, CTA, and Double Tubes method. In these conditions, we try the different gas source annealing, including vacuum, nitrogen, and oxyen, to inhance the electrical property of transparent conducting thin film. Finally, we use the best transparent conducting thin film to be the anode of OLED device. The thin films which are annealled get a nice surface status from the SEM image. We can also find out that the quantity of oxyen atomics is decreased in vacuum and nitrogen annealing. But the quantity of oxyen atomics is increased in oxyen annealing condition, even though the surface status is better than without annealing. The XRD analysis shows us the Double Tubes method is the best way of transparent conducting thin filmannealing. The intensity of (002) direction is stronger than RTA system and CTA system. In the electrical analysis, the best annealing parameter is Double Tubes method, under 450oC, N2 environment for 30 min. The sheet resistance is 13 Ω/□, the resistivity is 5.4*10-4 Ω-cm, and it is enough to be the anode material. Finally, we used the AZO thin film which annealing by double tubes system with nitrogen under 450℃. The luminance could reach 1890 cd/m2.