| Summary: | 碩士 === 國立雲林科技大學 === 光學電子工程研究所 === 97 === In this study, the aluminum induced crystallization (AIC) method is applied to form poly silicon thin film for application of solar cell. It is that using Al to induce and exchange the amorphous silicon layer results in poly-crystal Si layer. The Al and Si layer were deposited by the magnetron controlled sputtering system. The optimum process of the AIC method was obtained to grow the P-type seed poly layer. And then the i- and n-layer were sputtered on the exchanged P-type Si seed layer. The post deposition annealing in atmosphere nitrogen ambient at different temperatures and for different durations were applied on the deposited layers for the optimum process. There is another GaZnO-i-p structure also studied which n-type GaZnO replaces the n-type Si layer. These p-i-n diode were analyzed by the physical measurements (including of XRD, AFM and SEM), electrical measurements (including of Hall measurement and I-V measurement), and optical measurement (including of optical spectrum measurements) to obtain the optimum structure and process.
In this paper, the optimum AIC method is Al12Si12 processed at 520�aC for 2 hours, that poly Si layer shows high mobility of 11.3 cm2/V-s and hole concentration of 8.93�e1018 cm−3. The post deposition annealing (PDA) was applied on the p-i-n structure at 500�aC for 30 min which processed poly p-i-n showed (111) crystalline phase of diffractive degree of 28.48�a from XRD measurement. It shows the high absorption coefficient and low reflection from UV-VIS measurement. The energy bands of as-deposed amorphous n-Si layer, poly N-Si layers (processed with solid phase crystallization method) and poly Si layer with AIC method are 1.6eV, 1.5eV and 1.53eV, respectively.
We use heat-treat to i-layer and n-layer 20 minute to get best p-i-n I-V curve.
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