Fabrication of Nano-crystalline Silicon Thin Film on Flexible Substrate by Vacuum Arc Discharge.

碩士 === 大同大學 === 光電工程研究所 === 97 === Nano-crystalline silicon has been deposited on glass and plastic substrates by direct vacuum arc system at room to cryogenic temperature(77 K). Solid silicon wafer source were amount on both anode and cathode to be the electrodes which were highly doped single crys...

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Main Authors: Tsung-ying Lin, 林宗穎
Other Authors: Jeff Tsung-Hui Tsai
Format: Others
Language:zh-TW
Published: 2009
Online Access:http://ndltd.ncl.edu.tw/handle/57707674210668756004
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spelling ndltd-TW-097TTU051240142016-05-02T04:11:11Z http://ndltd.ncl.edu.tw/handle/57707674210668756004 Fabrication of Nano-crystalline Silicon Thin Film on Flexible Substrate by Vacuum Arc Discharge. 使用真空電弧放電法製作奈米晶矽薄膜於可撓式基板 Tsung-ying Lin 林宗穎 碩士 大同大學 光電工程研究所 97 Nano-crystalline silicon has been deposited on glass and plastic substrates by direct vacuum arc system at room to cryogenic temperature(77 K). Solid silicon wafer source were amount on both anode and cathode to be the electrodes which were highly doped single crystal silicon wafer(0.005 Ω/cm). It is suitable for deposited thin films on flexible substrate due to low deposition temperature. Silicon films were characterized by Raman spectroscopy、x-ray diffraction (XRD)、tunneling electron microscope (TEM) and scanning electron microscope (SEM). The result revealed that the crystalline structure embedded in amorphous matrix. High-resolution transmission electron microscopy (HRTEM) was used for direct analyzing the particle where the fully crystallized structure were inert the particles and these particles were random distributed over the substrate. The crystalline volume fraction were calculated from Raman spectrum and it showed the values between 0~92 %. The impurity concentration was measured by SIMS, that the P-type and N-type impurity was permeated simultaneously into the film during the deposition without additional doping process, thus P-N junction could be achieved. Nano-crystalline silicon has higher electron mobility and more stability against prolong light exposure than amorphous silicon. According to our research, the opto-electronic effect were not obviously, we assume that a large number of defects existed in the films. Compared to CVD process, arc discharge system has the advantages of low cost, less environment pollution and non-dangerous of processing. Such research has not yet been observed. Low temperature deposited nano-crystalline silicon thin film has attracted much attention due to applicable on low-cost substrates, like glass and flexible plastic substrate. Key words: Direct vacuum arc, Flexible substrate, crystalline volume fraction. Jeff Tsung-Hui Tsai 蔡宗惠 2009 學位論文 ; thesis 78 zh-TW
collection NDLTD
language zh-TW
format Others
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description 碩士 === 大同大學 === 光電工程研究所 === 97 === Nano-crystalline silicon has been deposited on glass and plastic substrates by direct vacuum arc system at room to cryogenic temperature(77 K). Solid silicon wafer source were amount on both anode and cathode to be the electrodes which were highly doped single crystal silicon wafer(0.005 Ω/cm). It is suitable for deposited thin films on flexible substrate due to low deposition temperature. Silicon films were characterized by Raman spectroscopy、x-ray diffraction (XRD)、tunneling electron microscope (TEM) and scanning electron microscope (SEM). The result revealed that the crystalline structure embedded in amorphous matrix. High-resolution transmission electron microscopy (HRTEM) was used for direct analyzing the particle where the fully crystallized structure were inert the particles and these particles were random distributed over the substrate. The crystalline volume fraction were calculated from Raman spectrum and it showed the values between 0~92 %. The impurity concentration was measured by SIMS, that the P-type and N-type impurity was permeated simultaneously into the film during the deposition without additional doping process, thus P-N junction could be achieved. Nano-crystalline silicon has higher electron mobility and more stability against prolong light exposure than amorphous silicon. According to our research, the opto-electronic effect were not obviously, we assume that a large number of defects existed in the films. Compared to CVD process, arc discharge system has the advantages of low cost, less environment pollution and non-dangerous of processing. Such research has not yet been observed. Low temperature deposited nano-crystalline silicon thin film has attracted much attention due to applicable on low-cost substrates, like glass and flexible plastic substrate. Key words: Direct vacuum arc, Flexible substrate, crystalline volume fraction.
author2 Jeff Tsung-Hui Tsai
author_facet Jeff Tsung-Hui Tsai
Tsung-ying Lin
林宗穎
author Tsung-ying Lin
林宗穎
spellingShingle Tsung-ying Lin
林宗穎
Fabrication of Nano-crystalline Silicon Thin Film on Flexible Substrate by Vacuum Arc Discharge.
author_sort Tsung-ying Lin
title Fabrication of Nano-crystalline Silicon Thin Film on Flexible Substrate by Vacuum Arc Discharge.
title_short Fabrication of Nano-crystalline Silicon Thin Film on Flexible Substrate by Vacuum Arc Discharge.
title_full Fabrication of Nano-crystalline Silicon Thin Film on Flexible Substrate by Vacuum Arc Discharge.
title_fullStr Fabrication of Nano-crystalline Silicon Thin Film on Flexible Substrate by Vacuum Arc Discharge.
title_full_unstemmed Fabrication of Nano-crystalline Silicon Thin Film on Flexible Substrate by Vacuum Arc Discharge.
title_sort fabrication of nano-crystalline silicon thin film on flexible substrate by vacuum arc discharge.
publishDate 2009
url http://ndltd.ncl.edu.tw/handle/57707674210668756004
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