Anistropic AlN nanocolumnar buffer layer prepared by Oblique-angle of deposition and GaN-based LED Applications
碩士 === 國立臺北科技大學 === 光電工程系所 === 97 === In this study, AlN nanorods structure Aluminium Nitride (AlN) film deposited with different oblique-angle by a reactive radio-frequency magnetron sputtering system for sapphire substrate. Sputtering the different angle of AlN films by oblique-angle to tilt the a...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/yhnq3h |
| Summary: | 碩士 === 國立臺北科技大學 === 光電工程系所 === 97 === In this study, AlN nanorods structure Aluminium Nitride (AlN) film deposited with different oblique-angle by a reactive radio-frequency magnetron sputtering system for sapphire substrate. Sputtering the different angle of AlN films by oblique-angle to tilt the angle of substrate, and the morphology and cross-sectional structure was observed. Use AlN nanorods buffer layer process for Gan-based light-emitting diode (LED) applications to improve light and electro property of LED.The forward voltage of the GaN-based LED with a AlN nanorods buffer layer was 3.1V lower than that of the GaN-based LED without an AlN nanorods buffer layer was 3.27V. The light output power up to saturation of injection current from 100mA to 250mA, significantly enhanced the LED performance.
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