| Summary: | 碩士 === 東海大學 === 電機工程學系 === 97 === With mobile communication products popularizing, the communication products expand speedily. For convenience to user, it is needed extremely to lighten and shrink the mobile productions. The system on a chip (SOC) is a solution to satisfy the need. Therefore, the SOC is a current trend of the development. In past years, silicon-base semiconductor process, computer-aided design tools, and circuit design skills have all made great progress, and it makes the high integration between digital and analog circuits. However, it is difficult to integrate with radio frequency (RF) circuits. One of those RF circuits is RF filter. Because silicon substrate is conductance material inducing large power loss and low quality factor (Q) of components. If the Q factor of RF-filter is low, the filter capability is limited. It makes bad selectivity of the filter bad and the filter is difficult to be integrated. In this study, for achieving the purpose of SOC, the CMOS-MEMS technology is utilized to improve the quality factor of the component, and then to increase the probability of integrating the RF filter into a system. The proposed filter has a good insertion loss performance. The minimum insertion loss performance can reach 3.7dB at 4.7 GHz, which is one of the best performances in past passive CMOS RF bandpass filter studies.
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