The study of low temperature aluminum induced crystallization (AIC) poly-Si1-xGex and poly silicon thin film and its optic-electronic characteristics

• Main Authors: Jheng-Jie Syu, 徐政傑
• Other Authors: Hon-Kuan
• Format: Others
• Language: zh-TW
• Published: 2009
• Online Access: http://ndltd.ncl.edu.tw/handle/57619089948452563518

碩士 === 南台科技大學 === 光電工程系 === 97 === In this thesis, poly-Si1-xGex films and poly-Si films, which are fabricated by aluminum-induced crystallization (AIC) process, are induced and crystallized with different parameters such as annealing time and thickness of Al thin films. We also discuss the effects of different processes on the micro-structure and electrical properties of poly-Si1-xGex films and poly-Si films. Ultra high vacuum chemical vapor deposit system is used to deposit a-Si1-xGex:H of 300nm-thick on silicon wafer at first, and then the nano aluminum film with various thickness (10、20、40、80、160 nm) is deposited on the sample. Finally, the poly-Si1-xGex films with various crystalline sizes are obtained by different annealing processes. In another experiments, plasma enhanced chemical vapor deposition is used to deposit a-Si:H of 80 nm-thick on glass first, and then the nano aluminum film with various thickness (20、40、80、160 nm) is deposited on the sample. Finally, the poly-Si films with various crystalline sizes are obtained by different annealing processes. In this thesis, the surface structure, roughness and crystallization of poly-Si1-xGex films and poly-Si films are quantitatively measured by field emission scanning electron microscope (FE-SEM), atomic force microscope (AFM), and X-Ray etc. Additionally, the bonds of poly-Si1-xGex:H and poly-Si:H thin films are verified by micro Raman spectrometer and Fourier transform infrared spectrometer. Finally, the carrier mobility of poly-Si1-xGex:H and poly-Si:H thin films can be measured by Hall measurement . From the results, it can be observed that the relative crystallinity, crystal size, mobility, and the range of optical absorption spectrum of poly-Si1-xGex:H and poly-Si:H thin films can be improved by tuning the annealing time and aluminum thickness.