Study on Against Oxidation and Sulfidation of Ag(La) thin film
碩士 === 國立虎尾科技大學 === 材料科學與綠色能源工程研究所 === 97 === The characteristics of Ag(La) alloy thin films and its applications as the materials of interconnect were investigation in study. This work aims at preparing a high adhesion, oxidation resistance and self-passivated Ag(La) alloy thin film, which will be...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/59y9z8 |
| Summary: | 碩士 === 國立虎尾科技大學 === 材料科學與綠色能源工程研究所 === 97 === The characteristics of Ag(La) alloy thin films and its applications as the materials of interconnect were investigation in study. This work aims at preparing a high adhesion, oxidation resistance and self-passivated Ag(La) alloy thin film, which will be potentially adopted as gate material on TFT-LCD and interconnection on microelectronics. Ag(0.54-8.74 at.% La) films were prepared on SiO2/Si substrate by sputtering method and were subsequently annealed by furnace in a temperature range of 400°C - 800°C for 1 hour in oxygen ambient. Self-passivated Ag thin film in the form of La2O3/Ag/SiO2 was therefore obtained because La diffused easily from matrix toward the surface and reacted with the oxygen by forming La2O3. The formation of La2O3/Ag /SiO2 improved the resistivity, adhesion to SiO2, oxidation resistance and passivative behavior of the studied film. Besides, the Ag alloy films pre-annealed at 500°C in oxygen ambient reveal a superior sulfidation resistance . The pre-annelaed Ag(2.80 at.% La) thin film has the lowest sheet resistance of 2.34 Ω/□ .
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