Preparation and properties of alumina nanowire

• Main Authors: Chi-Tsung Tsai, 蔡基琮
• Other Authors: Wei-Long Liu 劉偉隆
• Format: Others
• Language: zh-TW
• Published: 2009
• Online Access: http://ndltd.ncl.edu.tw/handle/upud2e

碩士 === 國立虎尾科技大學 === 材料科學與綠色能源工程研究所 === 97 === This research is to prepare alumina nanowires by electrochemical method and to study the characteristic of these alumina nanowires. In the preparation process, the Al substrate was first put in electrolysis solution and to be anodized by a direct current power supply for the growth of anodic alumina membrane with nanosized pores, and then put in an acid solution for electrochemically etching. The parameter influence the growth of alumina nanowires include: number of anodizing treatment, concentration of anodizing solution, temperature of anodizing solution, voltage of anodizing treatment, anodizing time, annealing temperature for Al substrate, annealing time, concentration of etching solution, temperature of etching solution, and etching time. Taguchi method was used to obtain the optimum condition for better yield. The growth mechanism of alumina nanowire and characteristic of photoluminescence were discussed. Finally a verification experiment was performed. The result showed that the optimum condition is: number of anodizing treatment : 2, concentration of anodizing: 0.3M, temperature of anodizing : 0,voltage of anodizing treatment: 70V, anodizing time: 3 hours,annealing temperature for Al substrate: 400,annealing time for Al substrate: 5 hours, concentration of etching solution: 3M, temperature of etching solution: 20,etching time:75min. The alumina nanowires have strong photoluminescence peak at 440nm (blue color) by Ultraviolet (UV) laser(wavelength=325 nm) excitation.