(1)Ionic outgassing of photoacid generators upon irradiation at 13.5 nm(2)Preparation and characterization of mesoporous carbon
碩士 === 國立高雄大學 === 應用化學系碩士班 === 97 === (1) Extreme ultraviolet (EUV) lithography at 13.5-nm is the most likely candidate of the next-generation lithography. This work studies dissociative photoionization (ionic outgassing) of the photoacid generator (PAG), which is one important composition of chemic...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
2009
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Online Access: | http://ndltd.ncl.edu.tw/handle/88835706428138060983 |