AZOY transparent conducting thin films prepared by RF magnetron sputtering

碩士 === 國立高雄大學 === 化學工程及材料工程學系碩士班 === 97 === As the development of photoelectricity industry, new materials are invented continuously. The researches of “transparent conducting oxide” have played an important role because the two characteristics of transparent conducting thin films, transparency and...

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Bibliographic Details
Main Authors: Guan-Hung Shen, 沈冠宏
Other Authors: Cheng-Fu Yang
Format: Others
Language:zh-TW
Published: 2009
Online Access:http://ndltd.ncl.edu.tw/handle/34m7a8
Description
Summary:碩士 === 國立高雄大學 === 化學工程及材料工程學系碩士班 === 97 === As the development of photoelectricity industry, new materials are invented continuously. The researches of “transparent conducting oxide” have played an important role because the two characteristics of transparent conducting thin films, transparency and conductivity, can be widely applied for the industry of semiconductor and photoelectricity such as LCD, solar cells, and transparent touch panel etc. This research utilizes RF magnetron sputtering system to deposit AZOY thin films on the glass substrate. During the sputtering process, the distance between target and substrate will individually alter oxygen concentration, chamber pressure, substrate temperature, sputtering power, deposition time, and deposition parameters to proceed the deposition of thin films. Then we use Alpha-step to measure the thickness of thin films in order to estimate the deposition rate of thin films’ surface. We also use XRD, SEM, and AFM to observe the morphology and the crystalline structure of thin films. In addition, transmittance can be measured by spectrophotometer and conductivity can be measured through using four-point probe. Finally, we try to interpret all phenomena that we measured and observed above in a reasonable way and find out the optimum experiment parameter. According to the research result, adjusting the deposition parameters of thin films will affect the characteristics of AZOY transparent conducting thin films. The optimum processing parameters are 0% oxygen concentration, 3mTorr chamber pressure, 400℃ substrate temperature, 150W sputtering power, 120 mins deposition rate. In addition, the lowest resistivity is 8.437×10-4Ω-cm and the average transmittance of thin files in the region of visible is around 80%.