Nitrogen doped ZnO prepared by reactive ion beam sputtering deposition
碩士 === 國立臺灣科技大學 === 電子工程系 === 97 === Nitrogen doped ZnO (ZnO:N) thin films were prepared by reactive ion beam sputtering deposition utilizing a capillaritron ion source at 300�aC. XRD analysis indicates that the as-deposited ZnO:N exhibits a single (002) diffraction peak at 34.40�a. Annealing at 5...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/73599068987839147534 |