The Thermal Effect on Deep Sleep Power and RF Performance ofWi-Fi Skype Phone

碩士 === 國立臺灣科技大學 === 電子工程系 === 97 === In recent years, thermal effect generated from the VLSI chip has been one of the items that low power designers want to improve the most, particularly that from the chips in various portable applications, like notebook, cell phone and PDA. In smaller and faster...

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Main Authors: Ting Yueh Chen, 陳廷岳
Other Authors: Shanq-Jang Ruan
Format: Others
Language:zh-TW
Published: 2008
Online Access:http://ndltd.ncl.edu.tw/handle/68300751607143762079
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spelling ndltd-TW-097NTUS54280052015-10-13T14:49:22Z http://ndltd.ncl.edu.tw/handle/68300751607143762079 The Thermal Effect on Deep Sleep Power and RF Performance ofWi-Fi Skype Phone 熱效應對Wi-FiSkypePhone的深睡模式功耗及RF效能之影響 Ting Yueh Chen 陳廷岳 碩士 國立臺灣科技大學 電子工程系 97 In recent years, thermal effect generated from the VLSI chip has been one of the items that low power designers want to improve the most, particularly that from the chips in various portable applications, like notebook, cell phone and PDA. In smaller and faster electronic products, thermal effect of VLSI chip is a critical factor to power, timing, performance and reliability as well . How to analyze thermal effect and how to improve power and RF performance of VLSI chip are both the most important issues to all the low power designers. The theme of this essay is to study the relation between thermal effect and leakage power and RF performance. In our experiment, we measured the power consumption of Wi-Fi Skype phone step by step: Wi-Fi connect, talk, disconnect, Idle, and RF Tx power performance under three different environment temperatures (-20℃, 25℃, 50℃). We would like to point out that under the reactive result made happen between thermal effect and deep sleep mode power, idle time can be saved to extend Battery lifetime. Based on the result of the experiment, the deep sleep mode in low power is the lowest (1.3 mW) power consumption and RF Tx power performance is the highest value (14.4dBm) under low temperature environment. But the deep sleep mode in low power is the highest (1.51 mW) power consumption, and RF Tx power performance is the lowest value (13.6dBm) under high temperature environment. This is due to that the characteristic of CMOS is easily to be affected by the temperature around, which caused the change of RF performance and the leakage of system chip. The paper is concluded that when the environment temperature changes from high to low, 17 percentage of power consumption can be saved under deep sleep mode of Wi-Fi power consumption, and the battery lifetime is extended in idle mode of Wi-Fi Skype phone. Shanq-Jang Ruan 阮聖彰 2008 學位論文 ; thesis 49 zh-TW
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language zh-TW
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description 碩士 === 國立臺灣科技大學 === 電子工程系 === 97 === In recent years, thermal effect generated from the VLSI chip has been one of the items that low power designers want to improve the most, particularly that from the chips in various portable applications, like notebook, cell phone and PDA. In smaller and faster electronic products, thermal effect of VLSI chip is a critical factor to power, timing, performance and reliability as well . How to analyze thermal effect and how to improve power and RF performance of VLSI chip are both the most important issues to all the low power designers. The theme of this essay is to study the relation between thermal effect and leakage power and RF performance. In our experiment, we measured the power consumption of Wi-Fi Skype phone step by step: Wi-Fi connect, talk, disconnect, Idle, and RF Tx power performance under three different environment temperatures (-20℃, 25℃, 50℃). We would like to point out that under the reactive result made happen between thermal effect and deep sleep mode power, idle time can be saved to extend Battery lifetime. Based on the result of the experiment, the deep sleep mode in low power is the lowest (1.3 mW) power consumption and RF Tx power performance is the highest value (14.4dBm) under low temperature environment. But the deep sleep mode in low power is the highest (1.51 mW) power consumption, and RF Tx power performance is the lowest value (13.6dBm) under high temperature environment. This is due to that the characteristic of CMOS is easily to be affected by the temperature around, which caused the change of RF performance and the leakage of system chip. The paper is concluded that when the environment temperature changes from high to low, 17 percentage of power consumption can be saved under deep sleep mode of Wi-Fi power consumption, and the battery lifetime is extended in idle mode of Wi-Fi Skype phone.
author2 Shanq-Jang Ruan
author_facet Shanq-Jang Ruan
Ting Yueh Chen
陳廷岳
author Ting Yueh Chen
陳廷岳
spellingShingle Ting Yueh Chen
陳廷岳
The Thermal Effect on Deep Sleep Power and RF Performance ofWi-Fi Skype Phone
author_sort Ting Yueh Chen
title The Thermal Effect on Deep Sleep Power and RF Performance ofWi-Fi Skype Phone
title_short The Thermal Effect on Deep Sleep Power and RF Performance ofWi-Fi Skype Phone
title_full The Thermal Effect on Deep Sleep Power and RF Performance ofWi-Fi Skype Phone
title_fullStr The Thermal Effect on Deep Sleep Power and RF Performance ofWi-Fi Skype Phone
title_full_unstemmed The Thermal Effect on Deep Sleep Power and RF Performance ofWi-Fi Skype Phone
title_sort thermal effect on deep sleep power and rf performance ofwi-fi skype phone
publishDate 2008
url http://ndltd.ncl.edu.tw/handle/68300751607143762079
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