| Summary: | 碩士 === 國立臺灣科技大學 === 電子工程系 === 97 === In recent years, thermal effect generated from the VLSI chip has been one of the items that low power designers want to improve the most, particularly that from the chips in various portable applications, like notebook, cell phone and PDA. In smaller and faster electronic products, thermal effect of VLSI chip is a critical factor to power, timing, performance and reliability as well . How to analyze thermal effect and how to improve power and RF performance of VLSI chip are both the most important issues to all the low power designers. The theme of this essay is to study the relation between thermal effect and leakage power and RF performance. In our experiment, we measured the power consumption of Wi-Fi Skype phone step by step: Wi-Fi connect, talk, disconnect, Idle, and RF Tx power performance under three different environment temperatures (-20℃, 25℃, 50℃). We would like to point out that under the reactive result made happen between thermal effect and deep sleep mode power, idle time can be saved to extend Battery lifetime. Based on the result of the experiment, the deep sleep mode in low power is the lowest (1.3 mW) power consumption and RF Tx power performance is the highest value (14.4dBm) under low temperature environment. But the deep sleep mode in low power is the highest (1.51 mW) power consumption, and RF Tx power performance is the lowest value (13.6dBm) under high temperature environment. This is due to that the characteristic of CMOS is easily to be affected by the temperature around, which caused the change of RF performance and the leakage of system chip. The paper is concluded that when the environment temperature changes from high to low, 17 percentage of power consumption can be saved under deep sleep mode of Wi-Fi power consumption, and the battery lifetime is extended in idle mode of Wi-Fi Skype phone.
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